STUD303S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for low R DS (ON).

S TU/D303S
S amHop Microelectronics C orp.
Nov,16, 2007
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
RDS(ON) (mW) Max
-30V -24A
28 @ VGS = -10V
40 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rocteced
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
S ymbol
Limit
Unit
VDS
-30
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous @ Tc=25 C
ID
-24
A
-P ulsed ^a
IDM
-96
A
Drain-S ource Diode Forward C urrent
IS
-20
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1