STUD09N25 Datasheet, PDF (1/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STU09N25
STD09N25
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Max
250V
7.5A
0.4 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I ^- PAK ⁾
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^{a d}
T_C=25°C
TC=100°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation
T_C=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±20
7.5
4.74
25
52
21
-55 to 150
2.4
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,09,2013
www.samhop.com.tw