STUD04N20 Datasheet, PDF (1/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU04N20
Sa mHop Microelectronics C orp.
Green
Product
STD04N20
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
1.4 @ VGS=10V
200V
4A
1.6 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I ^- PAK ⁾
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^c
T_C=25°C
TC=70°C
I_DM
-Pulsed ^{a c}
P_D
Maximum Power Dissipation
T_C=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
200
±20
4
3.3
11
50
35
-55 to 175
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Aug,26,2014
www.samhop.com.tw