STU9916L Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STU/D9916L
SamHop Microelectronics Corp.
Preliminary Mar.25 2004
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID
RDS(ON) ( m ) Max
30V
25A
30@ VGS = 10V
40@ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
SDU SERIES
TO-252AA(D-PAK)
G
DS
SDD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
V
Drain Current-Continuous^a @TA= 25 C
ID
-Pulsed ^b
IDM
25
A
63
A
Drain-Source Diode Forward Current ^a
IS
20
A
Maximum Power Dissipation ^a
PD
50
W
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
3
C/W
Thermal Resistance, Junction-to-Ambient
R JA
50
C/W
1