STU612D Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Product
STU612D
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
60V
8.6A
RDS(ON) (mΩ) Max
76 @ VGS=10V
90 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
-60V
-7.3A
RDS(ON) (mΩ) Max
110 @ VGS=-10V
145 @ VGS=-4.5V
D1/D2
S1
G1
S2 _G2
TO-252-4L
D1
D2
G1
G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
N-Channel P-Channel
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
60
-60
±20
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
8.6
-7.3
6.9
-5.8
I_DM
-Pulsed ^b
25
-21
E_AS
Sigle Pulse Avalanche Energy ^d
20
30
P_D
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
10.5
6.7
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case ^a
Thermal Resistance, Junction-to-Ambient ^a
12
°C/W
60
°C/W
Details are subject to change without notice.
1
Mar,05,2009
www.samhop.com.tw