STU606S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
STU/D606S
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.2
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
56 @ VGS=10V
60V
21A
68 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I ^- PAK ⁾
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
I_DM
-Pulsed ^b
E_AS
Sigle Pulse Avalanche Energy ^d
P_D
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
60
±20
21
16.8
61
25
50
32
-55 to 150
2.5
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Dec,03,2012
www.samhop.com.tw