STU4530NL Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S T U/D4530NL
S amHop Microelectronics C orp.
APR 28,2005
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
30V
45A
9.5 @ VGS = 10V
19 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO251 and TO 252 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
30
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous @ TC=25 C
ID
45
A
-P ulsed ^a
IDM
110
A
Drain-S ource Diode Forward C urrent
IS
20
A
Maximum P ower Dissipation
PD
50
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1