STU432S Datasheet, PDF (1/9 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics Corp.
STU/D432S
Nov,19,2007 ver1.4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
4
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m W ) Max
40V
50A
9 @ VGS = 10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
20
V
a
Drain Current-Continuous @Ta
25 C
ID
50
A
-Pulsed ^b
IDM
100
A
Drain-Source Diode Forward Current ^a
IS
20
A
Avalanche Current ^c
IAS
23
A
Avalanche Energy ^c
EAS
130
mJ
Maximum Power Dissipation ^a
Ta= 25 C
PD
50
W
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
3
C /W
Thermal Resistance, Junction-to-Ambient
R JA
50
C /W
1