STU426S Datasheet, PDF (1/9 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

S amHop Microelectronics C orp.
S T U/D426S
Oct,2007 ver1.1
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m Ω ) Typ
40V
53A
8 @ _{VGS = 10V}
10 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
P a ra meter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
40
V
Gate-S ource Voltage
VGS
20
V
Drain Current-Continuous @ Ta= 25 C
ID
53
A
a
-P uls ed
IDM
100
A
Drain-S ource Diode Forward Current
IS
20
A
c
Avalanche Current
IAS
20
A
Avalanche Energy ^c
EAS
100
mJ
Maximum P ower Dissipation _@ Ta= 25 C
PD
50
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1