STU412S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level Enhancement Mode Field Effect Transistor

STU/D412S
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
26 @ VGS=10V
40V
22A
40 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
ESD Protected.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
E_AS
Avalanche Energy ^c
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
Limit
40
±20
22
17.5
80
10
25
16
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case ^a
5
R _JA
Thermal Resistance, Junction-to-Ambient ^a
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Aug,07,2008
1
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