STU407DH Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

S TU407DH
S amHop Microelectronics C orp.
Apr 20 2007
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID
R DS (ON) ( m Ω ) Max
29 @ VGS = 10V
40V
16A
39 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-40V
ID
-12A
R DS (ON) ( m Ω ) Max
47 @ VGS = -10V
64 @ VGS = -4.5V
D1/D2
D1
D2
S1
G1
S2 _G2
TO-252-4L
G1
G2
S 1 N-ch
S 2 P-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS
40
-40
V
Gate-S ource Voltage
VGS
20
20
V
25 C
16
-12
A
Drain C urrent-C ontinuous @ Tc
ID
70 C
13.8 -10
A
-P ulsed ^a
IDM
50
-50
A
Drain-S ource Diode Forward C urrent
IS
8
-6
A
Tc= 25 C
11
Maximum P ower Dissipation
PD
W
Tc= 70 C
7.7
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
13.6
C /W
Thermal R esistance, Junction-to-Ambient
R JA
120
C /W
1