STU3055L2 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics Corp.
STU/D3055L2
Feb.01 2005 ver1.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
20V
ID
RDS(ON) ( m W ) Max
40 @ VGS = 10V
18A
45 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
12
V
Drain Current-Continuous @TC=25 C
ID
18
A
-Pulsed ^a
IDM
30
A
Drain-Source Diode Forward Current
IS
15
A
Maximum Power Dissipation @Tc=25 C
PD
50
W
Operating and Storage Temperature Range _{TJ, TSTG}
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
Thermal Resistance, Junction-to-Ambient
R JA
3
C /W
50
C /W
1