STU3055L2-60 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STU/D3055L2-60
SamHop Microelectronics Corp.
Nov 26 , 2004 Ver1.2
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m ) Max
20V
14A
65 @ VGS = 4.5V
90 @ VGS = 2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
12
V
Drain Current-Continuous @^a TJ=125 C
ID
14
A
-Pulsed ^b (300ms Pulse Width)
IDM
23
A
Drain-Source Diode Forward Current ^a
IS
10
A
Maximum Power Dissipation ^a
PD
50
W
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
3
C /W
Thermal Resistance, Junction-to-Ambient
R JA
50
C /W
1