STU3055L Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

S T U/D3055L
S amHop Microelectronics C orp.
MAR ,09 2005 ver1.1
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
25V
12A
70 @ VGS = 10V
95 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
25
V
Gate-S ource Voltage
VGS
16
V
Drain C urrent-C ontinuous @ TJ=25 C
ID
12
A
a
-P ulsed
IDM
40
A
Drain-S ource Diode Forward C urrent
IS
5
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange _{TJ, TS TG}
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
Thermal R esistance, Junction-to-Ambient
R JA
3
C /W
50
C /W
1