STU1855PL Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

S amHop Microelectronics C orp.
S T U/D1855P L
Arp,20 2005 ver1.1
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
-55V
-15A
68 @ VGS = -10V
85 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
AB S OLUTE MAXIMUM R ATINGS
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous ^a @ Ta
25 C
70 C
-P ulsed ^b
(TA=25 C unles s otherwis e noted)
S ymbol
Limit
Unit
V s pike ^d
60
V
VDS
-55
V
VGS
20
V
ID
-15
A
-12
A
IDM
-30
A
Drain-S ource Diode Forward C urrent ^a
IS
-10
A
Ta= 25 C
42
Maximum P ower Dissipation ^a
PD
W
Ta=70 C
28
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
1_{R JA}
50
C /W
1