STT6603 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – P-Channel Enhancement Mode Field Effect Transistor

Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STT6603
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
-60V
-2.5A
180 @ VGS=-10V
240 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-223 package.
G
S
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TA=25°C
TA=70°C
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
-60
±20
-2.5
-2.0
-20
2.08
1.33
-55 to 150
60
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,17,2008
www.samhop.com.tw