STT08L01 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STT08L01 ^Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.2
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m ) Max
100V
2.5A
225 @ VGS=10V
360 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TA=25°C
TA=70°C
E_AS
Single Pulse Avalanche Energy ^d
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case ^a
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
100
±20
2.5
2.0
10
12
3
1.9
-55 to 150
12
42
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,27,2011
www.samhop.com.tw