STT04N20 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
STT04N20
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Max
1.8 @ VGS=10V
200V
1A
2.0 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
200
±20
1
0.8
6.6
3
1.9
-55 to 150
42
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,01,2012
www.samhop.com.tw