STS6604L Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

Green
Product
STS6604L
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
60 @ VGS=4.5V
20
4A
75 @ VGS=2.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-20V
-2.5A
138 @ VGS=-4.5V
190 @ VGS=-2.5V
SOT 26
Top View
G1 _{1 6} D1
S2 _{2 5 S1}
G2 ³ 4 _D2
D1
D2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
N-Channel
P-Channel
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
20
-20
±12
±12
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
4
-2.5
3.2
-2
10
9.4
1.25
0.8
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,22,2010
www.samhop.com.tw