STS4622 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field E ffect Trans is tor

S amHop Microelectronics C orp.
S TS 4622
J un, 06 2006
Dual N-Channel Enhancement Mode Field Effect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m : ) Max
40V
3A
65 @ VGS = 10V
85 @ V G S =4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-26 package.
S OT 26
Top View
G1 _{1 6} D1
S2 2 5 S1
G2 ³ 4 D2
D1
D2
G1
S1
G2
S2
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
40
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous @ TJ=25 C
ID
3
A
-P ulsed ^b
IDM
12
A
Drain-S ource Diode Forward C urrent
IS
1.25
A
Maximum P ower Dissipation ^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
100
C /W
1