STS4300 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S amHop Microelectronics C orp.
S TS 4300
APR .25 2006
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
62 @ VGS = 10V
40V
3.5A
80 @ V G S =4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
40
V
Gate-S ource Voltage
VGS
20
V
25 C
3.5
A
Drain C urrent-C ontinuous @ Ta
ID
70 C
2.7
A
-P ulsed ^a
IDM
15
A
Drain-S ource Diode Forward C urrent
IS
1.25
A
Ta= 25 C
1.25
Maximum P ower Dissipation
PD
W
Ta=70 C
0.76
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a R JA
100
C /W
1