STS3621 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

S TS 3621
S amHop Microelectronics C orp.
Oct. 24 2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID
R DS (ON) ( m Ω ) Max
30V
3A
50 @ VGS = 10V
65 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-30V
ID
R DS (ON) ( m Ω ) Max
90 @ VGS = -10V
-2A
135 @ VGS = -4.5V
SOT 26
Top View
G1 _{1 6} D1
S2 2 5 S1
G2 ³ 4 _D2
D1
D2
G1
G2
S 1 N-ch
S 2 ^P-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS
30
-30
V
Gate-S ource Voltage
VGS
20
20
V
a
25 C
3
-2
A
Drain C urrent-C ontinuous @ Ta
ID
70 C
2.7
1.8
A
-P ulsed ^b
IDM
12
-8
A
Drain-S ource Diode Forward C urrent ^a
IS
1.25 -1.25
A
Ta= 25 C
1.25
Maximum P ower Dissipation ^a
PD
W
Ta=70 C
0.8
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a R JA
100
C /W
1