STS3420 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STS3420
Ver 1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
33 @ VGS= 10V
30V
4.5A
40 @ VGS= 4.5V
53 @ VGS= 2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TC=25°C
TC=70°C
P_D
Maximum Power Dissipation ^a
T_C=25°C
T_C=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
30
±12
4.5
3.6
18
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,19,2013
www.samhop.com.tw