STS3415 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Gr
Pr
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3415
Ver 2.0
PRODUCT SUMMARY
VDSS
-20V
ID
-4.2A
RDS(ON) (mΩ) Max
46 @ VGS=-4.5V
47 @ VGS=-4.0V
49 @ VGS=-3.7V
54 @ VGS=-3.1V
61 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
-20
±10
-4.2
-3.4
-16
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
May,22,2012
www.samhop.com.tw