STS3405 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

S TS 3405
S amHop Microelectronics C orp.
S ep.15 2005
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
-30V
-3A
100 @ VGS = -10V
130 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 P ackage.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
S ymbol
Limit
Unit
VDS
- 30
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous @ TJ=25 C
ID
-3
A
-P ulsed ^b
IDM
- 12
A
Drain-S ource Diode Forward C urrent
IS
-1.25
A
Maximum P ower Dissipation ^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
100
C /W
1