STS2621 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Dual P -Channel Enhancement Mode Field Effect Transistor

S TS 2621
S amHop Microelectronics C orp.
J un.6 2005
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) MAX
-20V
-2A
130 @ VGS = -4.5V
190 @ VGS = -2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-26 P ackage.
TSOP6
Top View
G1 _{1 6} D1
S1 2 5 S2
G2 ³ 4 _D2
D1
D2
G1
G2
S1
S2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
-20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous ^a @ TC=25 C
ID
-2
A
-P ulsed ^b
IDM
-7
A
Drain-S ource Diode Forward C urrent ^a
IS
-1.25
A
Maximum P ower Dissipation ^a
PD
1
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
125
C /W
1