STS2620A Datasheet, PDF (1/9 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel )

STS2620A
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel )
Ver1.2
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
20V
2.5A
50 @ VGS=4.5V
76 @ VGS=2.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-20V
-2A
106 @ VGS=-4.5V
198 @ VGS=-2.5V
SOT 26
Top View
G1 _{1 6} D1
S2 _{2 5} S1
G2 ³ 4 _D2
D1
D2
G1
G2
S1
Nch
S2
P ch
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol
V_DS
V_GS
I_D
I_DM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous ^a
-Pulsed ^b
TC=25°C
TC=70°C
N-Channel P-Channel
20
-20
±10
±10
2.5
-2
2
-1.6
8
-7
P_D
TJ, TSTG
a
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
TC=25°C
TC=70°C
1
0.64
-55 to 150
Units
V
V
A
A
A
W
W
°C
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
125
°C/W
Details are subject to change without notice.
1
Nov,24,2010
www.samhop.com.tw