STS2611 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

S amHop Microelectronics C orp.
S TS 2611
FE B 25 2005
P-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
-20V -2.8A
90 @ VGS = -4.5V
150 @ VGS = -2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-26 package.
TSOP6
Top View
D
16 ^D
D
25 D
G
34 _S
1 25 6
D
3
G
4_S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
-20
V
Gate-S ource Voltage
VGS
12
V
Drain C urrent-C ontinuous ^a @ TJ=25 C
ID
-2.8
A
-P ulsed ^b
IDM
-11
A
Drain-S ource Diode Forward C urrent ^a
IS
-1.25
A
Maximum P ower Dissipation ^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
100
C /W
1