STS2321 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – P-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics Corp.
STS2321
Oct .29 2004 V1.1
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m W ) Max
-20V -3.2A
65 @ VGS = -4.5V
90 @ VGS =-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
SOT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
10
V
Drain Current-Continuous^a @TJ=25 C
ID
-3.2
A
-Pulsed ^b
IDM
-11
A
Drain-Source Diode Forward Current ^a
IS
-1.25
A
Maximum Power Dissipation ^a
PD
1.25
W
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
RthJA
100
C/W
1