STP656F Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Pr
SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor
STP656F
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m ) Max
19 @ VGS=10V
60V
22A
29 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220F Package.
D
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Limit
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
60
±20
22
17.7
I_DM
-Pulsed ^b
66
E_AS
Avalanche Energy ^d
182
PD
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
21
13.3
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case ^a
6
R _JA
Thermal Resistance, Junction-to-Ambient ^a
65
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Dec,01,2010
www.samhop.com.tw