STP652F Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

Gre
Pro
STP652F
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
60V
29A
22 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F package.
D
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Limit
V_DS
Drain-Source Voltage
60
V_GS
Gate-Source Voltage
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
29
24
I_DM
-Pulsed ^b
90
E_AS
Avalanche Energy ^d
110
PD
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
46
32
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
3.25
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,27,2010
www.samhop.com.tw