STP60L60F Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Gr
Pr
STP60L60F
SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
60V
32A
15 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220F Package.
D
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
Limit
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
60
±20
32
26.8
I_DM
-Pulsed ^b
95
E_AS
Avalanche Energy ^d
144
PD
Maximum Power Dissipation ^a
TC=25°C
30
TC=70°C
21
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
5
R _JA
Thermal Resistance, Junction-to-Ambient
65
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,13,2011
www.samhop.com.tw