STP45L01F Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Green
Product
STP45L01F
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
100V
40A
20 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220F Package.
D
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Limit
V_DS
Drain-Source Voltage
100
V_GS
Gate-Source Voltage
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
40
32
I_DM
-Pulsed ^b
118
E_AS
Avalanche Energy ^d
560
PD
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
62.5
40
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case ^a
2
R _JA
Thermal Resistance, Junction-to-Ambient ^a
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,03,2010
www.samhop.com.tw