STP3055L2 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode Field Effect Transistor

S T P /B 3055L2
S amHop Microelectronics C orp.
Nov 23, 2004
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
40 @ VGS = 4.5V
20V
18A
60 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-220 and TO-263 P ackage.
D
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
G
S
ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
12
V
Drain C urrent-C ontinuous @ TJ=25 C
ID
18
A
a
-P ulsed
IDM
45
A
Drain-S ource Diode Forward C urrent
IS
15
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange _{TJ, TS TG}
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
Thermal R esistance, Junction-to-Ambient
R JA
3
C /W
50
C /W
1