STP15L01F Datasheet, PDF (1/9 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Pr
STP15L01/F
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
100V
110 @ VGS=10V
15A
121 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
STP SERIES
TO-220
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
I_DM
-Pulsed ^b
E_AS
Single Pulse Avalanche Energy ^d
P_D
a
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
TO-220 TO-220F
100
±20
±20
15
15 ^e
12.6
12.6 ^e
45
45 ^e
25
58
25
40
17.5
-55 to 175
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case ^a
Thermal Resistance, Junction-to-Ambient ^a
2.6
6
62.5
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Nov,01,2010
www.samhop.com.tw