STM9930A Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – 2N and 2P Channel E nhancement Mode Field Effect Transistor

S TM9930A
S amHop Microelectronics C orp.
Dec.20, 2005
2N and 2P Channel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID
R DS (ON) ( m W ) Max
35 @ VGS = 10V
30V
6A
54 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
ID
R DS (ON) ( m W ) Max
-30V
-5.3A
53 @ VGS = -10V
75 @ VGS = -4.5V
P2G
N2D/P2D
P1S/P2S
P1G
S O-8
N2G
N1S/N2S
N1D/P1D
N1G
P1G
P1S
P1N1D
P2S
P2G
P2N2D
N1G
N1S
N2S
N2G
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS
30
-30
V
Gate-S ource Voltage
VGS
20
20
V
a
25 C
Drain C urrent-C ontinuous @ Ta
ID
6
-5.3
A
70 C
4
-3.5
A
-P ulsed ^b
IDM
20
-20
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7 -1.7
A
Ta= 25 C
2
Maximum P ower Dissipation ^a
PD
Ta=70 C
1.44
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a R JA
62.5
C /W
1