STM9410 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STM9410
SamHop Microelectronics Corp.
OCT.29, 2004
V1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
30V
ID
6.3A
RDS(ON) ( m Ω ) MAX
32 @ VGS = 10V
55 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
V
Drain Current-Continuous^a @TA=25 C
ID
6.3
A
-Pulsed ^b
IDM
25
A
Drain-Source Diode Forward Current ^a
IS
1.7
A
Maximum Power Dissipation ^a
PD
2.5
W
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
R JA
50
C/W
1