STM8501 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field Effect Transistor (N and P Channel)

S TM8501
S amHop Microelectronics C orp.
J an.10 2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID
R DS (ON) ( m W ) Max
55V
5A
50 @ VGS = 10V
70 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
ID
R DS (ON) ( m W ) Max
-55V - 3.5A
80 @ VGS = -10V
100 @ VGS = -4.5V
D1 D1 D2 D2
8
7
6
5
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
S ymbol N-C hannel P-C hannel Unit
Vspike ^d
60
-60
V
Drain-S ource Voltage
VDS
55
-55
V
Gate-S ource Voltage
VGS
20
20
V
a
25 C
5 ^{- 3.5}
A
Drain C urrent-C ontinuous @ Ta
ID
70 C
4.2 - 2.8
A
-P ulsed ^b
IDM
22 - 18
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7 -1.7
A
Ta= 25 C
2
Maximum P ower Dissipation ^a
PD
W
Ta=70 C
1.44
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a R JA
1
62.5
C /W