STM8456 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

STM8456
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
33 @ VGS=10V
40V
6.2A
45 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-40V
-5.3A
45 @ VGS=-10V
70 @ VGS=-4.5V
S O-8
1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
N-Channel
P-Channel
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
40
-40
±20
±20
a
I_D
Drain Current-Continuous
TA=25°C
6.2
T_A=70°C
4.9
-5.3
-4.2
I_DM
-Pulsed ^b
25
-22
E_AS
Single Pulse Avalanche Energy ^d
9
16
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
2
1.28
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
62.5
Units
V
V
A
A
A
mJ
W
°C
°C/W
Details are subject to change without notice.
1
May,29,2008
www.samhop.com.tw