STM8362 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Product
STM8362
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.1
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
40V
6.6A
29 @ VGS=10V
45 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-40V
-5.8A
38 @ VGS=-10V
60 @ VGS=-4.5V
S O-8
1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
N-Channel P-Channel
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
40
-40
±20
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
6.6
-5.8
5.3
-4.6
I_DM
-Pulsed ^b
24
-21
E_AS
Sigle Pulse Avalanche Energy ^d
36
30
P_D
Maximum Power Dissipation ^a
T_C=25°C
T_C=70°C
2
1.28
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
62.5
°C/W
Details are subject to change without notice.
1
Nov,12,2009
www.samhop.com.tw