STM8020 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STM8020
SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor
Mar. 30 2007
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m Ω ) Max
35V
12A
9 @ VGS = 10V
13 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
35
V
Gate-S ource Voltage
VGS
20
V
a
25 C
12
A
Drain C urrent-C ontinuous @ Ta
ID
70 C
9.6
A
b
-P ulsed
IDM
48
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
A
Ta= 25 C
2.5
Maximum P ower Dissipation ^a
PD
W
Ta=70 C
1.6
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
R JA
50
C /W
1