STM7822 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode F ield E ffect Transistor

S TM7822
S amHop Microelectronics C orp.
Arp,20 2005 ver1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
25V
14A
6.5 @ VGS = 10V
7.5 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage R ating
V s pike ^d
30
V
Drain-S ource Voltage
VDS
25
V
Gate-S ource Voltage
VGS
16
V
Drain C urrent-C ontinuous ^a @ Tc=25C
ID
14
A
-P ulsed ^b
IDM
56
A
Drain-S ource Diode Forward C urrent ^a
IS
14
A
Maximum P ower Dissipation ^a
PD
2.5
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
50
C /W
1