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STM7064N Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor
S TM7064N
S amHop Microelectronics C orp.
Aug 17,2005
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Typ
6 @ VGS = 10V
30V
16A
8.5 @ VGS = 4.5V
DDDD D
S OP -8
E xpos ed
1S S SG
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
Thermal P ad E xposed with S tandard S OP -8 Outline
Bottom-side
Drain Contact
D5
D6
D7
D8
4G
3S
2S
1S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
30
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous a @ TJ=25 C
ID
16
A
-P ulsed b
IDM
50
A
Drain-S ource Diode Forward C urrent a
IS
1.7
A
Maximum P ower Dissipation a
PD
3.0
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
40
C /W
1