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STM6967 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).
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Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STM6967
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
-60V
86 @ VGS=-10V
-4A
125 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
D5
D6
D7
D8
4G
3S
2S
1S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
E AS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a
-Pulsed b
Single Pulse Avalanche Energy d
Maximum Power Dissipation a
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-60
±20
-4
-3.2
-22
49
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Apr,28,2010
www.samhop.com.tw