STM6960 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field Effect Transistor

STM6960
SamHop Microelectronics Corp.
Nov 12 2007 Ver1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m W ) Max
60V
5A
60 @ VGS = 10V
75 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
D1 D1 D2 D2
8 7 65
SO-8
1
1 23 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
V
a
25 C
5
A
Drain Current-Continuous @Ta
ID
70 C
4.3
A
-Pulsed ^b
IDM
25
A
Drain-Source Diode Forward Current ^a
IS
1.7
A
Ta= 25 C
2
Maximum Power Dissipation ^a
PD
W
Ta=70 C
1.44
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
R JA
62.5
C /W
1