STM6915 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

S TM6915
S amHop Microelectronics C orp.
Dec, 12 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m ı ) Max
30V
8.5A
19 @ VGS = 10V
28 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
8 7 65
S O-8
1
1
23
4
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
N-Channel
Unit
Drain-S ource Voltage
VDS
30
V
G ate-S ource Voltage
VGS
20
V
a
Drain C urrent-C ontinuous @ T a
25 C
ID
8.5
A
70 C
6.5
A
-P uls ed ^b
IDM
40
A
Drain-S ource Diode F orward C urrent ^a
IS
1.7
A
Ta= 25 C
2
Maximum P ower Dissipation ^a
PD
W
T a=70 C
1.44
Operating J unction and S torage
Temperature R ange
TJ, TSTG
-55 to -150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
62.5
C /W
1