STM4884 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Gre
Pro
STM4884
SamHop Micrpelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 3.2
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m ) Typ
30V
13A
5.5 @VGS=10V
8.5 @VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
D5
D6
D⁷
D8
4G
3S
2S
1S
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
V_DGR
V_GS
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20 kΩ)
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
E_AS
Sigle Pulse Avalanche Energy ^d
I _AR
Avalanche Current
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
30
30
±20
13
10.5
52
45
13
2.5
1.6
-55 to 150
50
Units
V
V
V
A
A
A
mJ
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Mar,02,2011
www.samhop.com.tw