STM4800A Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S TM4800A
S amHop Microelectronics C orp.
Dec 30 2004 ver1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
18.5 @ VGS = 10V
30V
8.2A
33 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
30
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous ^a @ TJ=25 C
ID
8.2
A
-P ulsed ^b
IDM
33
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
A
Maximum P ower Dissipation ^a
PD
2.5
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
50
C /W
1