STM4470A Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for low R DS (ON).

STM4470A
SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor
May, 10 2007
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m ıΩ ) Max
40V
10A
10.5 @ VGS = 10V
13.5 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous ^a @TJ=25 C
-Pulsed ^b
Drain-Source Diode Forward Current ^a
Maximum Power Dissipation ^a
Operating Junction and Storage
Temperature Range
Symbol
Limit
Unit
VDS
40
V
VGS
20
V
ID
10
A
IDM
39
A
IS
1.7
A
PD
2.5
W
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
R JA
50
C /W
1