STM4470 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
STM4470
SamHop Microelectronics Corp.
Oct. 16. 2006 Ver1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ^d
ID
RDS(ON) ( m Ω ) Max
40V
10A
10 @ VGS = 10V
13 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous ^a @TJ=25 C
-Pulsed ^b
Drain-Source Diode Forward Current ^a
Maximum Power Dissipation ^a
Operating Junction and Storage
Temperature Range
Symbol
Limit
Unit
VDS ^d
40
V
VGS
20
V
ID
10
A
IDM
39
A
IS
1.7
A
PD
2.5
W
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient ^a
R JA
50
C /W
1